Realizing Fractional Chern Insulators with Dipolar Spins
نویسندگان
چکیده
N. Y. Yao1†∗, A. V. Gorshkov2†, C. R. Laumann1,3†, A. M. Läuchli, J. Ye, M. D. Lukin Physics Department, Harvard University, Cambridge, MA 02138, U.S.A. Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA 91125, U.S.A. ITAMP, Harvard-Smithsonian Center for Astrophysics, Cambridge, MA 02138, U.S.A. Institute for Theoretical Physics, University of Innsbruck, A-6020 Innsbruck, Austria JILA, National Institute of Standards and Technology and University of Colorado, Department of Physics, University of Colorado, Boulder, Colorado 80309, USA †These authors contributed equally to this work and ∗e-mail: [email protected]
منابع مشابه
Realizing fractional Chern insulators in dipolar spin systems.
Strongly correlated quantum systems can exhibit exotic behavior controlled by topology. We predict that the ν = 1/2 fractional Chern insulator arises naturally in a two-dimensional array of driven, dipolar-interacting spins. As a specific implementation, we analyze how to prepare and detect synthetic gauge potentials for the rotational excitations of ultracold polar molecules trapped in a deep ...
متن کاملSupplemental Material for Realizing Fractional Chern Insulators with Dipolar Spins I. DERIVATION OF THE EFFECTIVE HAMILTONIAN
Here, we derive the effective Hamiltonian, HB = − ∑ ij tija † iaj + 1 2 ∑ i6=j Vijninj (Eqn. 3 of the main text). The geometry is shown in the inset of Fig. 1A. The molecules lie in the X-Y plane and are governed by a Hamiltonian Hm = BJ − dE, where E is the applied electric field, which has spherical coordinates (Θ0,Φ0) in the {X,Y, Z} basis. To simplify the notation, we define |↑〉 = s|1,−1〉 +...
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